Open AccessAnalytical model for the surface electrical field distribution of double RESURF device with surface implanted P-top region
Author(s) -
Liqun Qi,
Zhaoji Li,
Bo Zhang
Publication year - 2007
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.56.6660
Subject(s) - poisson distribution , gaussian , surface (topology) , poisson's equation , field (mathematics) , gaussian surface , breakdown voltage , materials science , voltage , distribution (mathematics) , electric field , computational physics , physics , mathematical analysis , geometry , mathematics , statistics , quantum mechanics , pure mathematics
An analytical model for the surface electrical field distributions of double RESURF devices with Gaussian-doped P-top region is presented. Based on solvisng the 2-D Poisson equation, the model gives the closed form solutions of the surface potential and electrical field distribution as functions of the structure parameters and drain bias. The dependence of breakdown voltage on drift region length and thickness is calculated. An effectual way to get the optimum high-voltage devices is also proposed. All analytical results are well verified by simulation results obtained by MEDICI and previous experimental data, showing the validity of the presented model.