Open AccessBand gap Narrowing in heavily B doped Si1－xGex strained layers
Author(s) -
Fei Yao,
Chunlai Xue,
Cheng Bu-Wen,
Qiming Wang
Publication year - 2007
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.56.6654
Subject(s) - dopant , doping , materials science , valence band , band gap , condensed matter physics , conduction band , lattice constant , strain (injury) , boron , optoelectronics , optics , chemistry , physics , diffraction , medicine , organic chemistry , quantum mechanics , electron
This paper presents a comprehensive study of the effect of heavy B doping and strain in Si1-xGex strained layers. On the one hand, bandgap narrowing (BGN) will be generated due to the heavy doping, on the other hand, the dopant boron causes shrinkage in the lattice constant of SiGe materials, thus will compensate for part of the strain. Taking the strain compensation of B into account for the first time and uesing the with semi-empirical method, the Jain-Roulston model is modified. And the real BGN distributed between the conduction and valence bands is calculated, which is important for the accurate design of SiGe HBTs.