Open AccessInvestigation of the output characteristics of extremely short external cavity semiconductor laser using the ray tracing method
Author(s) -
Jiagui Wu,
Ziyan Wu,
Xia Guang-Qiong
Publication year - 2007
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.56.6457
Subject(s) - lasing threshold , laser , wavelength , optics , semiconductor , semiconductor laser theory , ray tracing (physics) , materials science , range (aeronautics) , optoelectronics , physics , composite material
Based on the ray tracing methodthe implicit expression of the output spectrum of the extremely short external cavity semiconductor laser (ESECSL) has been deduced for the first time. As a resultthe output spectrum and P-I characteristic of ESECSL have been investigated. The results show that: when the length of external cavity changes by an amount of the order of wavelengththe P-I characteristic of ESECSL will change obviously. The lasing wavelength of ESECSL will hop periodically in the range of 10nm with the variation of the length of external cavity. Especiallythe hopping range of the lasing wavelength will reach the maximum for the external cavity length varying within the range of 40—70μm. The simulations are well in accordance with the experimental reports.