Open AccessElectrical structures and optical properties of doped earth element (Y，La) in γ-Si3N4
Author(s) -
Ding Ying-Chun,
Xiang An-Ping,
Xu Ming,
Weiliang Zhu
Publication year - 2007
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.56.5996
Subject(s) - doping , dielectric , materials science , semiconductor , band gap , condensed matter physics , optoelectronics , rare earth , physics , metallurgy
The electronic structures and optical properties, the atomic population, bond lengths, band structures and density of states (DOS) of undoped and doped rare earth elements (Y, La) in γ-Si3N4 have been calculated by means of plane wave pseudo-potential method (PWP) with generalized gradient approximation (GGA). The gap after doping will decrease and enables the formation of new semiconductorwhich affords to help finding new semiconductor. We researched optical properties after doping of rare earth elements (Y, La), and found that the static dielectric constant of doped γ-Si3N4 is much higher than that of the undoped materialwhich may serve as new dielectric and refractive materialand may have special applications in certain optical devices.