Open AccessThe electron emission yield induced by the interaction of highly charged argon ions with silicon surface
Author(s) -
Zhao Yong-Tao,
Guoqing Xiao,
Xu Zhongfeng,
A. Qayyum,
Yuyu Wang,
Xiaoan Zhang,
Fuli Li,
Wenlong Zhan
Publication year - 2007
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.56.5734
Subject(s) - atomic physics , ion , projectile , silicon , electron cyclotron resonance , secondary emission , argon , kinetic energy , highly charged ion , electron , materials science , yield (engineering) , deposition (geology) , physics , ion source , nuclear physics , optoelectronics , paleontology , quantum mechanics , sediment , metallurgy , biology
The electron emission yield of the interaction of highly charged argon ions with silicon surface is reported. The experiment was done at the Atomic Physics Research Platform on the Electron Cyclotron Resonance (ECR) Ion Source of the National Laboratory HIRFL (Heavy Ion Research Facility in Lanzhou). In the experiment, the potential energy and kinetic energy was selected by varying the projectile charge states and extracting voltage, thus the contributions of the projectile potential energy deposition and electronic energy loss in the solid are extensively investigated. The results show that, the two main factors leading to surface electron emission,namely the potential energy deposition and the electronic energy loss, are both approximately proportional to the electron emission yield per ion.