Open AccessA new Schottky barrier structure of GaN-based ultraviolet photodetector
Author(s) -
Zhou Mei,
Zuo Shu-Hua,
Degang Zhao
Publication year - 2007
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.56.5513
Subject(s) - photodetection , photodetector , materials science , optoelectronics , schottky barrier , ultraviolet , schottky diode , quantum efficiency , layer (electronics) , nanotechnology , diode
A new GaN-based ultraviolet photodetector with Schottky barrior structure is proposed. Comparied with the conventional i-GaN/n+-GaN structurethere is an additional thin n-AlGaN cap layer on the i-GaN in the new structure. The simulation result demonstrates that the new structure leads to an increased quantum efficiency in GaN photodetectionsince the negative effect of surface states on the photodetector is reduced in the new structure. In additionit is suggested that the performance of device with the new structure could be further improved by employing an even thinner AlGaN cap layer with higher carrier concentration.