Open AccessThe effect of polarization and non-uniform carrier distribution in the GaN-based light emitting diodes
Author(s) -
Xiuquan Gu,
Guo Xia,
Wu Di,
Xu Li-Hua,
Ting Liang,
Jian Guo,
Shen Guang-di
Publication year - 2007
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.56.4977
Subject(s) - polarization (electrochemistry) , materials science , electric field , light emitting diode , diode , optoelectronics , wavelength , poisson's equation , rate equation , piezoelectricity , physics , quantum mechanics , chemistry , kinetics , composite material
GaN-based green light emitting diodes was designed and fabricated. We calculated the internal electric field using the coupled method on the basis of analyzing the effect of the spontaneous polarization and the piezoelectric polarization. Taking into consideration of the effect of non-uniform carrier distribution in the active region, we obtained the fractions of the carriers and the rate of the recombination in different wells by calculating the steady state rate equation and Poisson equation. It was found that the calculation data are consistent with the experimental data for the changes of the peak wavelength, the light power and the halfwidth with the current in the range of 10—70 mA.