Open AccessElectrical and optical properties of InAs/GaAs quantum dots doped by high energy Mn implantation
Author(s) -
Hu Liang-Jun,
Yonghai Chen,
Xiaoling Ye,
Zhanguo Wang
Publication year - 2007
Publication title -
acta physica sinica
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.56.4930
Subject(s) - materials science , doping , quantum dot , optoelectronics , ion implantation , condensed matter physics , metal , electronic structure , band gap , ion , physics , quantum mechanics , metallurgy
V+ were implanted into anantase films by metal ion implantation. The electronic band structures of TiO2 films doped with V+ were calculated using a self-consistent full-potential linearized augmented plane-wave method with
Accelerating Research
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom
Address
John Eccles HouseRobert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom