Open AccessBinding energies of excitons in symmetrical GaAs/Al0.3Ga0.7As double quantum wells
Author(s) -
Hong Zhang,
Lei Liu,
Jianjun Liu
Publication year - 2007
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.56.487
Subject(s) - binding energy , quantum well , exciton , wave function , physics , biexciton , condensed matter physics , rectangular potential barrier , tight binding , atomic physics , materials science , electronic structure , quantum mechanics , laser
The binding energies of excitons in symmetrical GaAs/Al0.3Ga0.7As double quantum wells are calculated variationally by using a simple wave function within the effective-mass approximation. The variation of the binding energies as functions of the well and barrier width is studied. It is found that, the changing tendency of the binding energies with the well width is similar to that of the single quantum well. However, we found that the maximum value of the binding energy occurs at well size of about 10?. The well size is smaller than that in single quantum wells. The binding energies have a minimum during the increase of the barrier width, which is related to the penetration into the barrier of the wave function.