Open AccessEffect of nitrogen pressure on structure and optical band gap of copper nitride thin films
Author(s) -
Jiang Xiao,
Hui Xu,
Yanfeng Li,
Mingjun Li
Publication year - 2007
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.56.4169
Subject(s) - materials science , thin film , band gap , nitride , copper , grain size , analytical chemistry (journal) , profilometer , sputter deposition , sputtering , optics , optoelectronics , composite material , surface roughness , nanotechnology , layer (electronics) , metallurgy , chemistry , physics , chromatography
Copper nitride (Cu3N) thin films were deposited on glass substrates by reactive radio frequency magnetron sputtering under different radio frequency power (P) and nitrogen partial pressure r(r=N2/N2+Ar). The thickness, crystalline structure and surface morphology of films were characterized by profilometer, X-ray diffraction (XRD) and atomic force microscopy (AFM), respectively. The optical transmission spectrum was obtained by an ultraviolet-visible (UV-VIS) spectrophotometer and the optical band gap (Eg) was calculated. The results suggest that the films' deposition rate increases with P and r. The surface of the films reveals a compact structure, and the grain size of Cu3N is about 30nm. Meanwhile, with increasing r, the grain size and optical band gap of Cu3N increase, of which Eg ranges from 1.47 to 1.82eV, and the films' growth prefers the (111) direction at low r and the (100) direction at high r.