Open AccessObservations on subband electron properties in In0.65Ga0.35As/In0.52Al0.48As MM-HEMT with Si δ-doped on the barriers
Author(s) -
Weixing Zhou,
Tao Lin,
Liyan Shang,
Huang Zm,
Bo Zhu,
Lei Cui,
HL Gao,
Li Dl,
Guo Sl,
Gui Ys,
Jianlin Chu
Publication year - 2007
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.56.4143
Subject(s) - condensed matter physics , high electron mobility transistor , shubnikov–de haas effect , electron , materials science , doping , substrate (aquarium) , magnetic field , range (aeronautics) , heterojunction , physics , poisson's equation , quantum well , fermi gas , transistor , quantum oscillations , quantum mechanics , voltage , laser , oceanography , geology , composite material
Magneto-transport measurements have been carried out on a Si δ-doped In0.65Ga0.35As/In0.52Al0.48As metamorphic high-electron-mobility transistor with InP substrate in a temperature range between 1.5 and 60K under magnetic field up to 13T. We studied the Shubnikov-de Haas(SdH) effect and the Hall effect for the In0.65Ga0.35As/In0.52Al0.48As single quantum well occupied by two subbands and obtained the electron concentration and energy levels respectively. We solve the Schrdinger-Kohn-Sham equation in conjunction with the Poisson equation self-consistently and obtain the configuration of conduction band, the distribution of carriers concentration, the energy level of every subband and the Fermi energy. The calculational results are well consistent with the results of experiments. Both experimental and calculational results indicate that almost all of the δ-doped electrons transfer into the quantum well in the temperature range between 1.5 and 60K.