Open AccessEnergy band design for Si/SiGe quantum cascade laser
Author(s) -
Lin Guijiang,
Zhou Zhi-Wen,
Hongkai Lai,
Li Cheng,
Songyan Chen,
Jinzhong Yu
Publication year - 2007
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.56.4137
Subject(s) - quantum cascade laser , cascade , materials science , quantum well , electronic band structure , laser , optoelectronics , quantum , silicon germanium , energy (signal processing) , dispersion (optics) , energy cascade , silicon , condensed matter physics , physics , optics , quantum mechanics , chemistry , chromatography , terahertz radiation
This paper introduces in detail the working principle of Si/SiGe Quantum cascade laser(QCL). Appropriate parameters are used to calculate the hole subband structure of Si/Si1-xGex quantum well using a six-band k·p method.The dispersion relation and energy band for different layer thickness and compositions are investigated. Meanwhile,the energy separations between hole subbands in Si/Si1-xGex/Si quantum wells are also analyzed. Finally the calculated results are used for the Si/SiGe QCL designwhich will be beneficial to the structure optimization of Si/SiGe QCL.