Energy band design for Si/SiGe quantum cascade laser | Zendy

Guijiang Lin | Zendy; Zhou Zhi-Wen | Zendy; Hongkai Lai | Zendy; Li Cheng | Zendy; Chen Songyan | Zendy; Yu Jinzhong | Zendy

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Energy band design for Si/SiGe quantum cascade laser

Author(s) -

Guijiang Lin,

Zhou Zhi-Wen,

Hongkai Lai,

Li Cheng,

Chen Songyan,

Yu Jinzhong

Publication year - 2007

Publication title -

acta physica sinica

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.199

H-Index - 47

ISSN - 1000-3290

DOI - 10.7498/aps.56.4137

Subject(s) - quantum cascade laser , cascade , materials science , quantum well , electronic band structure , laser , optoelectronics , quantum , silicon germanium , energy (signal processing) , dispersion (optics) , energy cascade , silicon , condensed matter physics , physics , optics , quantum mechanics , chemistry , chromatography , terahertz radiation

This paper introduces in detail the working principle of Si/SiGe Quantum cascade laser(QCL). Appropriate parameters are used to calculate the hole subband structure of Si/Si1-xGex quantum well using a six-band k·p method.The dispersion relation and energy band for different layer thickness and compositions are investigated. Meanwhile,the energy separations between hole subbands in Si/Si1-xGex/Si quantum wells are also analyzed. Finally the calculated results are used for the Si/SiGe QCL designwhich will be beneficial to the structure optimization of Si/SiGe QCL.

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