Open AccessThe influence of deposition temperature on the structure of microcrystalline silicon film
Author(s) -
Yongsheng Chen,
Xiaoyong Gao,
Shie Yang,
Jingxiao Lu,
Jiande Gu
Publication year - 2007
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.56.4122
Subject(s) - materials science , deposition (geology) , silane , silicon , atmospheric temperature range , microcrystalline , volume fraction , crystalline silicon , analytical chemistry (journal) , raman spectroscopy , pulsed laser deposition , thin film , chemical engineering , composite material , nanotechnology , optics , crystallography , chemistry , optoelectronics , thermodynamics , paleontology , physics , engineering , chromatography , sediment , biology
Undoped hydrogenated silicon films have been prepared from a gas mixture of silane and hydrogen, at deposition temperature varying from 200—450℃ in an ultrahigh vacuum system using RFPECVD technique. Raman scattering, SEM and UV spectrophotometer are used to analyse the structure changes of microcrystalline silicon films throughout the deposition temperature range. Results show that at lower deposition temperature, the crystalline volume fraction of μc-Si:H films increased with the increasing of deposition temperature. Exceeding a certain temperature, the crystalline volume fraction decreased with further increasing of deposition temperature. This is attributed to a change in the dominant film growth process from surface-diffusion-limited at low deposition temperatures to flux-limited at higher deposition temperatures.