Open AccessGrown-in oxygen precipitates in czochralski silicon investigated by transmission electron microscopy
Author(s) -
Jun Xu,
Li Fu-Long,
Deren Yang
Publication year - 2007
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.56.4113
Subject(s) - transmission electron microscopy , silicon , materials science , oxygen , czochralski method , nitrogen , precipitation , analytical chemistry (journal) , crystallography , doping , nanotechnology , optoelectronics , chemistry , physics , organic chemistry , chromatography , meteorology
The grown-in oxygen precipitates in conventional Czochralski (CZ) silicon and nitrogen-doped Czochralski (NCZ) silicon have been investigated by means of transmission electron microscopy (TEM). Tiny oxygen precipitates about 5nm in size were observed in the NCZ specimens. It is believed that the oxygen precipitates may have grown from the heterogeneous nuclei of nitrogen-related complexes formed at a low temperature of 650℃.