Open AccessGrowth rate model of InP epitaxial lateral overgrowth
Author(s) -
Lei Liu,
Xiangxia Ren,
Jing Zhou,
Qi Wang,
Deping Xiong,
Hui Huang,
Huang Yong-qing
Publication year - 2007
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.56.3570
Subject(s) - metalorganic vapour phase epitaxy , epitaxy , materials science , growth rate , diffusion , chemical vapor deposition , substrate (aquarium) , optoelectronics , parametric statistics , surface diffusion , deposition (geology) , growth model , window (computing) , optics , layer (electronics) , nanotechnology , computer science , chemistry , thermodynamics , physics , geometry , mathematics , geology , oceanography , operating system , paleontology , adsorption , statistics , sediment , mathematical economics
Theoretical expressions of the epitaxial lateral overgrowth rate in the metalorganic chemical vapor deposition (MOCVD) have been formulated in this paper, with respect to two separate processes: vapor phase diffusion and mask surface diffusion. In the case of InP deposition on GaAs substrate, a parametric study was accomplished in order to determine the impact of the mask/window width to the growth rate. The model, which uses a new parameter “effective mask length” Lmask, reveals that the key factors determining the growth rate are mask/window width and mask width/effective mask length. This model can be used as a tool for predict the growth conditions leading to expected growth rate.