Open AccessCharacterization of Ni/Au GaN Schottky contact base on I-V-T and C-V-T measurements
Author(s) -
Jie Liu,
Yue Hao,
Feng Qian,
Chong Wang,
Jincheng Zhang,
Liang-Liang Guo
Publication year - 2007
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.56.3483
Subject(s) - materials science , schottky diode , schottky barrier , work function , characterization (materials science) , diode , capacitance , biasing , condensed matter physics , work (physics) , base (topology) , optoelectronics , voltage , metal , analytical chemistry (journal) , thermodynamics , nanotechnology , physics , electrode , metallurgy , quantum mechanics , mathematical analysis , chemistry , mathematics , chromatography
Based on the temperature-dependent current-voltage (I-V-T) measurements and the temperature-dependent capacitance-voltage (C-V-T) measurements of Schottky diodes fabricated on n-type GaNthe mechanism of the electrical current transport was discussed using thin surface barrier (TSB) model. The experiment results indicated that there are different mechanisms at different temperatures and bias. Based on this assumption we give a modified I-V characteristic formula which gives excellent fit to the experiment data. The SBHs determined from high-temperature I-V curveslow-temperature C-V curvesand the metal work function agree well each other.