Open AccessUltraviolet light emitting diode based on ZnO nanowires
Author(s) -
Sheng Hui,
Qifeng Zhang,
Wu Jin-Lei
Publication year - 2007
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.56.3479
Subject(s) - materials science , ultraviolet , nanowire , optoelectronics , diode , heterojunction , ultraviolet light , crystallinity , light emitting diode , composite material
The ultraviolet light emitting diode based on n-ZnO-nanowire/p-Si heterojunction was fabricated. Quasi-arrays of ZnO nanowires were grown on p-Si substrates using a simple low-temperature hydrothermal method that would be easily extended to mass production. As-grown ZnO nanowires showed good crystallinity, a preferable c axial orientation, and strong ultraviolet emission under optical excitation. Different kinds of cathodes were made to form the electrical contact. The I-V characteristics were diode-like. Under forward bias, the heterojunction diode emitted strong ultraviolet light at 387nm and weaker green light.