Ultraviolet light emitting diode based on ZnO nanowires | Zendy

Sun Hui | Zendy; Qifeng Zhang | Zendy; Jinlei Wu | Zendy

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Ultraviolet light emitting diode based on ZnO nanowires

Author(s) -

Sun Hui,

Qifeng Zhang,

Jinlei Wu

Publication year - 2007

Publication title -

acta physica sinica

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.199

H-Index - 47

ISSN - 1000-3290

DOI - 10.7498/aps.56.3479

Subject(s) - materials science , ultraviolet , nanowire , optoelectronics , diode , heterojunction , ultraviolet light , crystallinity , light emitting diode , composite material

The ultraviolet light emitting diode based on n-ZnO-nanowire/p-Si heterojunction was fabricated. Quasi-arrays of ZnO nanowires were grown on p-Si substrates using a simple low-temperature hydrothermal method that would be easily extended to mass production. As-grown ZnO nanowires showed good crystallinity, a preferable c axial orientation, and strong ultraviolet emission under optical excitation. Different kinds of cathodes were made to form the electrical contact. The I-V characteristics were diode-like. Under forward bias, the heterojunction diode emitted strong ultraviolet light at 387nm and weaker green light.

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