Open AccessStrain in AlInGaN thin films caused by different contents of Al and In studied by Rutherford backscattering/channeling and high resolution X-ray diffraction
Author(s) -
Huan Wang,
Yao Shu-De,
Pan Yao-Bo,
Guoyi Zhang
Publication year - 2007
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.56.3350
Subject(s) - reciprocal lattice , materials science , chemical vapor deposition , diffraction , sapphire , lattice constant , channelling , x ray crystallography , optics , thin film , rutherford backscattering spectrometry , metalorganic vapour phase epitaxy , perpendicular , crystallography , layer (electronics) , optoelectronics , epitaxy , laser , physics , chemistry , ion , nanotechnology , quantum mechanics , geometry , mathematics
A series of AlInGaN films with different contents of Al and In were grown by metal-organic chemical vapor deposition on sapphire with GaN (>2μm) intermediate layer. Rutherford backscattering/channeling was used to measure the compositions and the crystal quality of the AlInGaN films. Combining with the high resolution x-ray diffraction, the lattice constants and the strain in perpendicular andthe parallel directions of the AlInGaN epilayer can be determined accurately bytheθ-2θ scan of (0002) and (1015) reflections and the reciprocal-space x-ray mapping. We find that different contents of In and Al can effect the strain in the quaternary AlInGaN films obviously, and with the help of Vegard's law we give an explanation for this phenomenon.