
Effect of thickness of epitaxial PbZr0.4Ti0.6O3 film on the physical properties
Author(s) -
王英龙,
魏同茹,
刘保亭,
邓泽超
Publication year - 2007
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.56.2931
Subject(s) - materials science , condensed matter physics , epitaxy , dislocation , polarization (electrochemistry) , ferroelectricity , hysteresis , thin film , composite material , layer (electronics) , optoelectronics , nanotechnology , chemistry , physics , dielectric
The thickness dependence of the spontaneous polarization and the hysteresis loop of epitaxial PbZr0.4Ti0.6O3 thin films deposited on (001) SrTiO3 substrate was investigated via the Landau-Devonshire's phenomenological theory considering the coupling of the stress field of the edge dislocation and the polarization. The results show that the critical thickness for the formation of misfit dislocation is 1.27nm, and there is a drastic variation in the polarization near the dislocation in films with thickness greater than the critical value, which results in the formation of the dead layer that severely degrades ferroelectric properties. With decreasing the film thickness, both the dislocation spacing and the ratio of the dead layer to film total thickness increase. The thickness dependence of the hysteresis loop indicates that the remnant polarization decreases as the thickness decreases.