Open AccessStudy of high breakdown-voltage AlGaN/GaN FP-HEMT
Author(s) -
Liang-Liang Guo,
Feng Qian,
Yue Hao,
Yang Yan
Publication year - 2007
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.56.2895
Subject(s) - high electron mobility transistor , breakdown voltage , materials science , optoelectronics , fabrication , voltage , electrical engineering , transistor , medicine , alternative medicine , pathology , engineering
Fabrication and the characteristics at room temperature of FP-HEMT are reported, followed by a comparison of the actual characteristics with the conventional HEMT. With the incorporation of field plate, the breakdown voltage was enhanced from 52 to 142V.Comparison between AlGaN/GaN FP-HEMT and the conventional HEMT are also made, using Silvaco, as the simulation tool. The effect of enhancing the breakdown voltage is also investigated.