Open AccessRole of gas residence time in the deposition rate and properties of microcrystalline silicon films
Author(s) -
Qi Guo,
Xin Geng,
Sun Jian Wei,
) Changchun,
Han Xiao-Yan,
Xiaodan Zhang,
Ying Zhao
Publication year - 2007
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.56.2790
Subject(s) - plasma enhanced chemical vapor deposition , deposition (geology) , materials science , microcrystalline , microcrystalline silicon , silicon , chemical vapor deposition , volumetric flow rate , solar cell , residence time (fluid dynamics) , chemical engineering , analytical chemistry (journal) , crystalline silicon , nanotechnology , optoelectronics , chemistry , amorphous silicon , environmental chemistry , crystallography , physics , paleontology , geotechnical engineering , quantum mechanics , sediment , engineering , biology
To realize high deposition rate is an important problem in low-cost industrialization of microcrystalline silicon solar cells. Deposition of μc-Si:H films at a high rate was investigated using very-high-frequency plasma-enhanced chemical vapor deposition (VHF-PECVD) in this paper. The influence of gas residence time on de position rate and the photoelectric and micro structural properties in the CVD process were studied by changing total gas flow. As a result, the efficiency of the microcrystalline silicon solar cell prepared at deposition rate 12?/s reached 5.3%.