Open AccessStudies on surface roughness and growth mechanisms of microcrystalline silicon films by grazing incidence X-ray reflectivity
Author(s) -
Bingqing Zhou,
Fengzhen Liu,
Meifang Zhu,
Yuqin Zhou,
Zhonghua Wu,
Xing Chen
Publication year - 2007
Publication title -
acta physica sinica
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.56.2422
Subject(s) - materials science , plasma enhanced chemical vapor deposition , microcrystalline , substrate (aquarium) , silicon , x ray reflectivity , surface roughness , surface finish , thin film , chemical vapor deposition , island growth , analytical chemistry (journal) , optics , composite material , optoelectronics , nanotechnology , crystallography , epitaxy , chemistry , layer (electronics) , physics , oceanography , chromatography , geology
The microcrystalline silicon films at different growth stages were deposited by plasma-enhanced chemical vapor deposition (PECVD). The reflectivity of grazing incidence X-ray from synchrotron radiation has been applied to investigate the evolution of surface roughness of these thin films. By study of surface morphology of microcrystalline silicon (μc-Si:H), we understand their growth kinetics and growth mechanism. The results show that the growth exponent β is 0.21±0.01 and 0.24±0.01 for μc-Si:H films deposited on glass substrate at fixed substrate temperature, Under the following condition of electrode distance, pressure, rf power density, H2 dilutied at 200 ℃ to be 2 cm, 6.66×102 Pa and 0.22 W/cm2, 99% and 98%, respectively. According to the KPZ model in the PECVD case the growth mechanism of the μc-Si:H films is a finite diffusion growth.
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