Open AccessReflectivity and phase shift of semiconductor far-infrared mirrors
Author(s) -
Min Xu,
Yueheng Zhang,
Shen Wen-Zhong
Publication year - 2007
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.56.2415
Subject(s) - materials science , semiconductor , reflection (computer programming) , optics , doping , far infrared , phase (matter) , reflectivity , absorption (acoustics) , infrared , detector , wavelength , infrared detector , optoelectronics , range (aeronautics) , physics , quantum mechanics , computer science , composite material , programming language
We have carried out an in-depth investigation on the reflectivity R and phase shift φ of a novel semiconductor mirror, which can be applied in the far-infrared (FIR) spectral range. By fitting FIR reflection spectra of the GaAs material with different doping concentrations, empirical formulas are obtained for the doping concentration-dependent carrier relaxation time τ of n-GaAs and p-GaAs. The effects of structure and material parameters on the reflectivity and the phase shift of the mirror are analytically studied on the basis of the deduced formulas. All the related parameters of the mirror are further optimized, and the corresponding wavelength selectivity is calculated according to the highest absorption in the detector cavity. The experimental FIR reflection result confirms the theoretical simulation, revealing the unique properties of this mirror, which establishes the basis of optimum designing of various FIR mirrors.