Structure and growth behavior of low N-doped diamond film by microwave plasma assisted chemical vapor deposition | Zendy

Liu Yan-Yan | Zendy; E. BauerGrosse | Zendy; Zhang Qing-Yu | Zendy

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Structure and growth behavior of low N-doped diamond film by microwave plasma assisted chemical vapor deposition

Author(s) -

Liu Yan-Yan,

E. BauerGrosse,

Zhang Qing-Yu

Publication year - 2007

Publication title -

acta physica sinica

Language(s) - Uncategorized

Resource type - Journals

SCImago Journal Rank - 0.199

H-Index - 47

ISSN - 1000-3290

DOI - 10.7498/aps.56.2359

Subject(s) - materials science , chemical vapor deposition , diamond , microwave , doping , plasma , deposition (geology) , plasma enhanced chemical vapor deposition , carbon film , optoelectronics , chemical engineering , analytical chemistry (journal) , thin film , nanotechnology , composite material , environmental chemistry , chemistry , physics , paleontology , quantum mechanics , sediment , engineering , biology

采用微波等离子体化学气相沉积(MPCVD)技术在甲烷和氢气的混合气体中通过掺入微量氮气的方法合成了掺氮金刚石薄膜.利用扫描电子显微镜、拉曼光谱和透射电子显微镜对薄膜的形貌和结构进行了表征.研究结果表明处于基片中心位置的薄膜具有比较高的成核密度成核密度高达4.8×108　cm-2并且具有〈001〉的择优取向晶粒呈立方金刚石特征但沿{111}晶面生长时存在大量层错.处于基片边缘的薄膜成核密度较低晶粒为6H型多型金刚石结构而且多型金刚石的出现导致金刚石孪晶关系的变化.此外根据薄膜的生长速率探讨了MPCVD过程中掺氮对薄膜生长行为的影响.

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