Low pressure chemical vapor deposition synthesis of InN nanowires and their field electron emission | Zendy

Fan Ye | Zendy; Cai Xing-Min | Zendy; Wang Xiao-ming | Zendy; Jianguo Zhao | Zendy; Erqing Xie | Zendy

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Low pressure chemical vapor deposition synthesis of InN nanowires and their field electron emission

Author(s) -

Fan Ye,

Cai Xing-Min,

Wang Xiao-ming,

Jianguo Zhao,

Erqing Xie

Publication year - 2007

Publication title -

acta physica sinica

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.199

H-Index - 47

ISSN - 1000-3290

DOI - 10.7498/aps.56.2342

Subject(s) - nanowire , field electron emission , materials science , chemical vapor deposition , electric field , transmission electron microscopy , scanning electron microscope , current density , high resolution transmission electron microscopy , analytical chemistry (journal) , electron , nanotechnology , optoelectronics , chemistry , composite material , physics , chromatography , quantum mechanics

InN nanowires were prepared on Si substrates by low pressure chemical vapor deposition using Au as the catalyst. Scanning electron microscopy showed that the diameter of these nanowires is 60—100 nm, and the length is larger than 1 μm. High resolution transmission electron microscopy showed that the synthesized nanowires are a mixture of hexagonal and cubic phase. The field electron emission characteristics of these InN nanowires are good and the field emission current is stable. The turn-on electric field was 10.02 V/μm(the current density being 10 μA/cm2)and at the high electric field of 24　V/μmthe current density was as high as to 5.5 mA/cm2. The field electron emission mechanism of these nanowires is discussed.

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