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Characteristics of the Si-doped ferromagnetic shape memory alloy Co50Ni21Ga29Six
Author(s) -
Guodong Liu,
Xinqiang Wang,
Dai Xue-Fang,
Zhuhong Liu,
Shuyun Yu,
Jinglan Chen,
Guangheng Wu
Publication year - 2007
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.56.1686
Subject(s) - materials science , diffusionless transformation , thermoelastic damping , condensed matter physics , shape memory alloy , curie temperature , magnetic shape memory alloy , ferromagnetism , doping , magnetization , alloy , martensite , magnetic field , magnetic anisotropy , metallurgy , thermal , thermodynamics , microstructure , optoelectronics , physics , quantum mechanics
In order to improve the properties of Co—Ni—Ga alloys, experiments of adding Si to Co50Ni21Ga29 alloys were carried out to examine the effect of Si in quaternary Co50Ni21Ga29Six (x=1—2) alloys on their structure, martensitic transformation behavior and magnetic properties. The Co50Ni21Ga29Six (x=1,2) single crystals were successfully grown. All the samples with low Si doping show a sharp martensitic transformation with increasing temperature. The single crystal samples show a completely recoverable two-way shape memory with a strain of 2.5% upon the thermoelastic martensitic transformation. A large magnetic-field-induced strain of 110 ppm was measured at room temperature. A small quantity of Si doping can down-shift the martensitic transformation temperature, reduce the thermal hysteresis, decrease the magnetization but increase the Curie temperature. Especially, the Si doping can increase the magnetic anisotropy of Co—Ni—Ga-alloys, which is available to obtain large magnetic-field-induced strain in a low magnetic field. An electronic resistance “jump" of 4.5% upon the thermoelastic martensitic transformation was also reported.

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