Open AccessResearch on silane depletion status during the deposition of silicon thin films by high-pressure PECVD
Author(s) -
Guofu Hou,
Xue Jun-Ming,
Jian Sun,
Qi Guo,
Dekun Zhang,
Ren Hui-Zhi,
Ying Zhao,
Xin Geng,
YiGang Li
Publication year - 2007
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.56.1177
Subject(s) - silane , plasma enhanced chemical vapor deposition , materials science , thin film , crystallinity , silicon , deposition (geology) , chemical vapor deposition , raman spectroscopy , radio frequency power transmission , chemical engineering , plasma , optoelectronics , nanotechnology , composite material , optics , paleontology , amplifier , physics , engineering , cmos , quantum mechanics , sediment , biology
In this paper a series of hydrogenated silicon thin films were prepared by high-pressure radio frequency plasma enhanced chemical vapor deposition (RF-PECVD) using various plasma powers. The influence of plasma power on Raman crystallinity and deposition rate was investigated to study the silane depletion level during the deposition of silicon thin films. Based on these results the status of silane depletion were classified as un-depleted, depleted and over-depleted status. Additionally, the structural and opto-electrical properties were also investigated for those materials deposited under different silane depletion status. The results demonstrated that the μc-Si:H films, which are deposited at depleted status, have good opto-electrical properties and are suitable for application as intrinsic layers in solar cells.