Open AccessEffect of O2-doping on bonding configuration and electric properties of SiCOH films prepared by decamethylcyclopentasiloxane electron cyclotron resonance plasma
Author(s) -
Wei Yong-Xia,
Qian Xiao-Mei,
Yu Xiao-Zhu,
Y.Q. Chao,
Ning Zhao-Yuan,
Rongqing Liang
Publication year - 2007
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.56.1172
Subject(s) - electron cyclotron resonance , materials science , dielectric , doping , chemical vapor deposition , analytical chemistry (journal) , electron , nanotechnology , optoelectronics , chemistry , organic chemistry , physics , quantum mechanics
Carbon-doping oxide materials (SiCOH films) with k of 2.62 are prepared by electron cyclotron resonance chemical vapor deposition (ECR-CVD) from the mixture of decamethylcyclopentasioxane (D5) and oxygen (O2). This paper investigates the effect of O2-doping on bonding configuration, dielectric property and leakage current of the SiCOH low dielectric constant films. The results show that the leakage current can be reduced obviously on the premise that dielectric constant k is kept at a lower value by small O2-doping amount. For the SiCOH film deposited under O2 flow of 3 cm3/min, the dielectric constant k as low as 2.62 and leakage current of 8.2×10-9 A/cm2 can be obtained.