Electronic structure and physical properties of γ-Si3N4 under high pressure | Zendy

Ding Ying-Chun | Zendy; Xu Ming | Zendy; Hongzhe Pan | Zendy; Yibin Shen | Zendy; Zhu Wenjun | Zendy; He Hong-Liang | Zendy

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Electronic structure and physical properties of γ-Si3N4 under high pressure

Author(s) -

Ding Ying-Chun,

Xu Ming,

Hongzhe Pan,

Yibin Shen,

Zhu Wenjun,

He Hong-Liang

Publication year - 2007

Publication title -

acta physica sinica

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.199

H-Index - 47

ISSN - 1000-3290

DOI - 10.7498/aps.56.117

Subject(s) - materials science , electronic structure , plane wave , high pressure , plane (geometry) , condensed matter physics , thermodynamics , optics , physics , geometry , mathematics

The pressure-dependent electronic structure and physical properties of γ- Si3N4 have been calculated by means of plane wave pseudo-potential method (PWP) using GGA-PW91. Based on the calculations, we analyzed the influence of pressure on the optical and mechanical properties γ-Si3N4, which indicates that γ-Si3N4 is quite suitable for applications under high pressure.

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