Open AccessInfluence of deep level defects on electrical compensation in semi-insulating InP materials
Author(s) -
Jie Yang,
YW Zhao,
ZY Dong,
Ah Deng,
SS Miao,
B Wang
Publication year - 2007
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.56.1167
Subject(s) - materials science , annealing (glass) , doping , compensation (psychology) , optoelectronics , electrical resistivity and conductivity , composite material , electrical engineering , psychology , psychoanalysis , engineering
In this paper, we analyze and compare electrical compensation and deep level defects in semi-insulating (SI) materials prepared by Fe-doping and high temperature annealing of undoped InP. Influence of deep level defects in the SI-InP materials on the electrical compensation has been studied thermally stimulated current spectroscopy (TSC). Electrical property of the Fe-doped SI-InP is deteriorated due to involvement of a high concentration of deep level defects in the compensation. In contrast, the concentration of deep defects is very low in high temperature annealed undoped SI-InP in which Fe acceptors formed by diffusion act as the only compensation centre to pin the Fermi level, resulting in excellent electrical performance. A more comprehensive electrical compensation model of SI-InP has been given based on the research results.