Open AccessMathematical model of DC characteristic of SiGe charge injection transistors
Author(s) -
Bin Shen,
Heming Zhang,
Huiyong Hu,
Xuan Rong-Xi,
Xianying Dai
Publication year - 2007
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.56.1105
Subject(s) - transistor , materials science , voltage , matlab , optoelectronics , charge (physics) , current (fluid) , electrical engineering , computer science , physics , quantum mechanics , engineering , operating system
To visualize the relationship between the collector current and source-drain voltage in the SiGe/Si chare injection transistor (CHINT), the mathematical model of this device is set up by using the tunnel model of two-dimensional hole gas(2DHG)in SiGe/Si quantum well. Then the model is simulated by MATLAB, the result shows that the drain current shows strong negative differential resistance when VDS is about 1.5V, which is in accordance with the results of the other papers.