Open AccessRoom-temperature photoluminescence of ZnO/MgO multiple quantum wells deposited by reactive magnetron sputtering
Author(s) -
Ping Xin,
Cheng Sun,
Fuwen Qin,
Wen Sheng-Ping,
Qingyu Zhang
Publication year - 2007
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.56.1082
Subject(s) - photoluminescence , materials science , wurtzite crystal structure , superlattice , sputter deposition , quantum well , optoelectronics , sputtering , exciton , blueshift , annealing (glass) , condensed matter physics , thin film , optics , nanotechnology , laser , physics , zinc , composite material , metallurgy
Wurtzite ZnO/MgO superlattices were successfully grown on Si(001) substrates at 750℃ using radio-frequency reactive magnetron sputtering method. X-ray reflection and diffraction, electronic probe and photoluminescence analysis were used to characterize the multiple quantum wells (MQWs). The results showed the periodic layer thickness of the MQWs to be 1.85 to 22.3 nm. The blueshift induced by quantum confinement was observed. Least square fitting method was used to deduce the zero phonon energy of the exciton from the room-temperature photoluminescence. It was found that the MgO barrier layers has a much larger offset than ZnMgO. The fluctuation of periodic layer thickness of the MQWs was suggested to be a possible reason causing the photoluminescence spectrum broadening.