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Calculation of exciton energies and binding energies in ZnO film
Author(s) -
Xiaoqing Wen,
Hua Zhao
Publication year - 2007
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.56.1061
Subject(s) - exciton , binding energy , hamiltonian (control theory) , wave function , eigenfunction , excited state , many body theory , valence (chemistry) , reduced mass , atomic physics , physics , ground state , oscillator strength , radius , materials science , condensed matter physics , quantum mechanics , eigenvalues and eigenvectors , spectral line , mathematical optimization , mathematics , computer security , computer science
In this paper, a coupled 6×6 Hamiltonian valence eigenfunction is considered using effective mass approximation. Using a trial wave function separable in z direction and x-y plane, variational calculations are presented for energies of ground state and first excited state of heavy hole exciton and binding energies in ZnO film, and for radius of exciton under a variety of thickness d of ZnO film. And the correction of energies due to quantum tunnel effect of electronic wave function with the thickness d<2.0 nm is discussed.

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