Calculation of exciton energies and binding energies in ZnO film | Zendy

Wen Xiong | Zendy; Hua Zhao | Zendy

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Calculation of exciton energies and binding energies in ZnO film

Author(s) -

Wen Xiong,

Hua Zhao

Publication year - 2007

Publication title -

acta physica sinica

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.199

H-Index - 47

ISSN - 1000-3290

DOI - 10.7498/aps.56.1061

Subject(s) - exciton , binding energy , hamiltonian (control theory) , wave function , eigenfunction , excited state , many body theory , valence (chemistry) , reduced mass , atomic physics , physics , ground state , oscillator strength , radius , materials science , condensed matter physics , quantum mechanics , eigenvalues and eigenvectors , spectral line , mathematical optimization , mathematics , computer security , computer science

In this paper, a coupled 6×6 Hamiltonian valence eigenfunction is considered using effective mass approximation. Using a trial wave function separable in z direction and x-y plane, variational calculations are presented for energies of ground state and first excited state of heavy hole exciton and binding energies in ZnO film, and for radius of exciton under a variety of thickness d of ZnO film. And the correction of energies due to quantum tunnel effect of electronic wave function with the thickness d<2.0 nm is discussed.

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