Effect of dry etching on light emission of InAsP/InP SMQWs | Zendy

Meng Cao | Zendy; Huizhen Wu | Zendy; C. Liu | Zendy; Yan-Feng Lao | Zendy; Huang Zhan-Chao | Zendy; Xie Zhengsheng | Zendy; Jun Zhang | Zendy; Shan Jiang | Zendy

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Effect of dry etching on light emission of InAsP/InP SMQWs

Author(s) -

Meng Cao,

Huizhen Wu,

C. Liu,

Yan-Feng Lao,

Huang Zhan-Chao,

Xie Zhengsheng,

Jun Zhang,

Shan Jiang

Publication year - 2007

Publication title -

acta physica sinica

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.199

H-Index - 47

ISSN - 1000-3290

DOI - 10.7498/aps.56.1027

Subject(s) - materials science , photoluminescence , dry etching , etching (microfabrication) , microstructure , quantum well , layer (electronics) , surface roughness , surface finish , optoelectronics , isotropic etching , intensity (physics) , composite material , optics , laser , physics

The cap layers of InAsP/InP SMQWs and InAsP/InGaAsP strained single quantum wells (SSQW) are etched to different depths using ICP. The PL intensity of the quantum wells is enhanced by different degrees after dry etching. The quantum well surface becomes rough and the microstructure inside the quantum well is changed during dry etching. The influence of surface roughness to the photoluminescence of quantum well is eliminated by selectively wet etching the InP cap layer of the SSQW. It is attained that after the cap layer is dry etched off about 20 nm the PL intensity of SSQW is enhanced about 1.8 and 1.2 times due to the change in microstructure and the roughening of surface, respectively.

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