Open AccessStability of mixed phase silicon thin film material under light soaking
Author(s) -
Yan Wang,
Han Xiao-Yan,
Ren Hui-Zhi,
Guofu Hou,
Qi Guo,
Feng Zhu,
Dekun Zhang,
Sun Jian,
Xue Jun-Ming,
Ying Zhang,
Xin Geng
Publication year - 2006
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.55.947
Subject(s) - materials science , silicon , silane , nanocrystalline silicon , amorphous silicon , amorphous solid , microcrystalline silicon , plasma enhanced chemical vapor deposition , crystalline silicon , thin film , phase (matter) , microcrystalline , chemical engineering , optoelectronics , composite material , nanotechnology , crystallography , chemistry , organic chemistry , engineering
Silicon thin films material with different crystalline ratio (Xc) have been deposited with varying silane content of source gases in the PECVD process. We have researched how hydrogen content affects the material and the relationship between micro-structure and optoelectronic properties. Light soaking experiment was then performed. By comparing the changes in the properties before and after irradiation, we conclude that the amorphous region is responsible to the degradation of the photoelectronic property. The mixed phase amorphous silicon degrades less and is more stable than component the common amorphous silicon. The highly crystallized silicon is stable against light soaking. The microcrystalline silicon near the threshold is not so stable as the highly crystallized one, but its optoelectronic property is more suitable than the others for making microcrystalline silicon solar cells.