Open AccessPerpendicular current-driven magnetization switching in free layer of magnetic tunneling junctions and MRAM
Author(s) -
Zilong Peng,
Xiufeng Han,
Shanshan Zhao,
Wei Hong-Xiang,
Du Guan-Xiang,
Zhan Wang
Publication year - 2006
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.55.860
Subject(s) - condensed matter physics , magnetoresistive random access memory , materials science , quantum tunnelling , perpendicular , magnetization , electrical resistivity and conductivity , current (fluid) , magnetic field , random access memory , physics , thermodynamics , geometry , mathematics , quantum mechanics , computer science , computer hardware
A new method of readout and writing process driven by perpendicular current in magnetoresistantive random access memory (MRAM) based on the magnetic tunneling junction is reported, and its schematic structure and operation are described.