Perpendicular current-driven magnetization switching in free layer of magnetic tunneling junctions and MRAM | Zendy

Zilong Peng | Zendy; Han Xiu-Feng | Zendy; Sufen Zhao | Zendy; Wei Hong-Xiang | Zendy; Du Guan-Xiang | Zendy; Wen-shan Zhan | Zendy

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Perpendicular current-driven magnetization switching in free layer of magnetic tunneling junctions and MRAM

Author(s) -

Zilong Peng,

Han Xiu-Feng,

Sufen Zhao,

Wei Hong-Xiang,

Du Guan-Xiang,

Wen-shan Zhan

Publication year - 2006

Publication title -

acta physica sinica

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.199

H-Index - 47

ISSN - 1000-3290

DOI - 10.7498/aps.55.860

Subject(s) - condensed matter physics , magnetoresistive random access memory , materials science , quantum tunnelling , perpendicular , magnetization , electrical resistivity and conductivity , current (fluid) , magnetic field , random access memory , physics , thermodynamics , geometry , mathematics , quantum mechanics , computer science , computer hardware

A new method of readout and writing process driven by perpendicular current in magnetoresistantive random access memory (MRAM) based on the magnetic tunneling junction is reported, and its schematic structure and operation are described.

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