
Beating oscillation of two-dimensional electrons gas in narrow gap dilute magnetic semiconductor
Author(s) -
Bo Zhu,
Gui Yong-Sheng,
Qiu Zhi-Jun,
Weixing Zhou,
Yao Wei,
Guo Shao-Ling,
Chu Jun-Hao,
Zhang Fu-jia
Publication year - 2006
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.55.786
Subject(s) - zeeman effect , oscillation (cell signaling) , condensed matter physics , physics , quantum well , semiconductor , electron , fermi gas , magnetic semiconductor , modulation (music) , voltage , magnetic field , gate voltage , doping , materials science , atomic physics , optoelectronics , chemistry , quantum mechanics , laser , biochemistry , transistor , acoustics
This paper studies the detailed beating oscillation in Shubnikov-de Hass (SdH) of magnetic two dimensional electron gas consisting of a modulation doped n type Hg0.82Cd0.16Mn0.02Te/Hg0.3Cd0.7Te first type quantum well, by which found that temperature, gate voltage are both bring the variety of magnetic resistance beating node position. By analyzing beating patterns, gate voltage dependent Rashba spin-orbit splitting can be separated from temperature dependent giant Zeeman splitting.