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Synthesis and thermoelectric properties of Sb-doped type-Ⅰ Ge clathrates Ba8Ga16-xSbxGe30
Author(s) -
Cong Xiong,
Xinfeng Tang,
Qiong Qi,
Shukang Deng,
Qingjie Zhang
Publication year - 2006
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.55.6630
Subject(s) - spark plasma sintering , materials science , seebeck coefficient , thermoelectric effect , thermal conductivity , electrical resistivity and conductivity , thermoelectric materials , doping , analytical chemistry (journal) , sintering , thermodynamics , composite material , chemistry , organic chemistry , optoelectronics , physics , electrical engineering , engineering
The single-phase Sb-doped n-type Ba8Ga16-xSbxGe30 compounds were synthesized by melting reaction combined with spark plasma sintering. Influences of substituting Sb for Ga on the thermoelectric properties of the compounds were investigated. The results indicate that with the increase of Sb substitution fraction the Seebeck coefficient is decreased gradually, and the temperature which corresponds to the peak value of Seebeck coefficient moves to low-temperature. The electrical conductivity of the compounds increases at first and then decreases with the increase of x; when x=2, it reaches maximum. Substituting Sb for Ga has a great influence on the thermal properties of the compounds. Both the thermal conductivity and lattice thermal conductivity decrease in various degrees. Of all n-type Ba8Ga16-xSbxGe30 compounds, the compound Ba8Ga14Sb2Ge30 has the greatest ZT value, the maximal value of which reaches 1.1 at about 950 K.

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