Open AccessSynchrotron radiation stimulated etching of SiO2 thin films
Author(s) -
Changshun Wang,
Pan Xu,
Tsuneo Urisu
Publication year - 2006
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.55.6163
Subject(s) - materials science , etching (microfabrication) , thin film , silicon , photolithography , reactive ion etching , isotropic etching , optoelectronics , synchrotron radiation , sputtering , dry etching , substrate (aquarium) , sputter deposition , optics , composite material , nanotechnology , layer (electronics) , oceanography , physics , geology
The synchrotron radiation (SR) stimulated etching of SiO2 thin film surface was investigated with a contact cobalt mask, and the etched pattern of SiO2 thin films on silicon was made. The SiO2 thin film was grown on silicon surface by thermal oxidation. The contact cobalt mask was fabricated on SiO2 thin film by combining the techniques of photolithography and RF-magnetron sputtering. In the experiment, the anisotropic etching of SiO2 was effectively achieved by SR radiation with SF6 as the reaction gas. The etching rate increased with increasing gas pressure of SF6 in a certain range, and with decreasing the substrate temperature. Under SR irradiation with flowing SF6 and O2 did not etch the silicon crystal and the etching stopped completely at the SiO2/Si interface. Furthermore, the Co provided high resistance against the SR etching, indicating that Co is an ideal mask material for the synchrotron radiation stimulated etching.