Open AccessStudy on the large grain size poly-Si prepared by metal induced crystallization using nickel chemical source
Author(s) -
Zhao Shu-Yun,
Congcong Wu,
Zhaojun Liu,
Xuedong Li,
Wei Zhong,
Zhiguo Meng,
Xiong Shao-Zhen,
Fang Zhang
Publication year - 2006
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.55.6095
Subject(s) - crystallization , grain size , materials science , nickel , metal , chemical engineering , metallurgy , engineering
Nonv-electrical plating was employed to form nickel inducing source on the surface of α-Si thin film deposited by VHF-PECVD. It was observed that the nickel inducing source formed by this method appeared as “dots” uniformly distributed on the surface of a-Si thin film after annealed for several hours at 550℃. The quantity of “dot” on the a-Si was determined by Ni concentration in the solution, the PH value, and the plating times, etc. The lateral crystallization was observed if the density of “dots” is relatively low. Poly-Si with maximum grain size of 90μm was obtained from the original α-Si deposited by VHF-PECVD. High performance thin film transistor (TFT) monitors were fabricated using this poly-Si.