Study on the large grain size poly-Si prepared by metal induced crystallization using nickel chemical source | Zendy

Shuyun Zhao | Zendy; Chunya Wu | Zendy; Zhaojun Liu | Zendy; Xuedong Li | Zendy; Zhong Wang | Zendy; Meng Zhiguo | Zendy; Shaozhen Xiong | Zendy; Fang Zhang | Zendy

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Study on the large grain size poly-Si prepared by metal induced crystallization using nickel chemical source

Author(s) -

Shuyun Zhao,

Chunya Wu,

Zhaojun Liu,

Xuedong Li,

Zhong Wang,

Meng Zhiguo,

Shaozhen Xiong,

Fang Zhang

Publication year - 2006

Publication title -

acta physica sinica

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.199

H-Index - 47

ISSN - 1000-3290

DOI - 10.7498/aps.55.6095

Subject(s) - crystallization , grain size , materials science , nickel , metal , chemical engineering , metallurgy , engineering

Nonv-electrical plating was employed to form nickel inducing source on the surface of α-Si thin film deposited by VHF-PECVD. It was observed that the nickel inducing source formed by this method appeared as “dots” uniformly distributed on the surface of a-Si thin film after annealed for several hours at 550℃. The quantity of “dot” on the a-Si was determined by Ni concentration in the solution, the PH value, and the plating times, etc. The lateral crystallization was observed if the density of “dots” is relatively low. Poly-Si with maximum grain size of 90μm was obtained from the original α-Si deposited by VHF-PECVD. High performance thin film transistor (TFT) monitors were fabricated using this poly-Si.

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