Open AccessEffect of H2 on polycrystalline Si films deposited by plasma-enhanced CVD using Ar-diluted SiH4
Author(s) -
Jing Qi,
Jing Jin,
Hailong Hu,
Pingqi Gao,
Baohe Yang,
Deyan He
Publication year - 2006
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.55.5959
Subject(s) - crystallite , materials science , crystallization , chemical vapor deposition , plasma , plasma enhanced chemical vapor deposition , chemical engineering , deposition (geology) , polycrystalline silicon , analytical chemistry (journal) , optoelectronics , nanotechnology , chemistry , metallurgy , layer (electronics) , environmental chemistry , paleontology , physics , quantum mechanics , sediment , engineering , biology , thin film transistor
Low-temperature polycrystalline Si films were fabricated by radio frequency plasma-enhanced chemical vapor deposition using SiH4, Ar and H2 as source gas. It was found that the content of H2 in the mixture plays an important role for crystallization of Si films. High-quality low-temperature polycrystalline Si films were obtained under the optimal amount of H2 in the source gas.