Open AccessMonte Carlo simulation of electron transmission through masks in projection electron lithography
Author(s) -
Xiao Pei,
Zengming Zhang,
Sun Xia,
Ding Ze-jun
Publication year - 2006
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.55.5803
Subject(s) - scattering , electron , monte carlo method , optics , materials science , electron beam lithography , projection (relational algebra) , physics , electron scattering , transmission (telecommunications) , computational physics , layer (electronics) , resist , nanotechnology , statistics , mathematics , quantum mechanics , algorithm , computer science , electrical engineering , engineering
We have calculated electron energy loss spectrum for electrons transmitted through a mask in projection electron lithography by Monte Carlo simulation based on the dielectric function model and Mott elastic scattering cross section. A good agreement between simulation and experiment is obtained. The calculation results of the transmission and contrast for the masks in scattering angular limitation for projection electron lithography show that the contrast is dominated by the thickness of scattering layer (thicker the scattering layer higher the contrast), but is less affected by the thickness of the supporting membrane. Furthermore, with the increasing aperture angle the transmission increases but the contrast reduces, and the contrast decreases with increasing primary energy of electrons.