Effect of La doping on ferroelectric properties of Bi4Ti3O12 thin film | Zendy

Dongyun Guo | Zendy; Yunbo Wang | Zendy; Jun Yu | Zendy; Gao Jun-Xiong | Zendy; Meiya Li | Zendy

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Effect of La doping on ferroelectric properties of Bi4Ti3O12 thin film

Author(s) -

Dongyun Guo,

Yunbo Wang,

Jun Yu,

Gao Jun-Xiong,

Meiya Li

Publication year - 2006

Publication title -

acta physica sinica

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.199

H-Index - 47

ISSN - 1000-3290

DOI - 10.7498/aps.55.5551

Subject(s) - materials science , ferroelectricity , doping , thin film , microstructure , ion , bismuth titanate , composite material , optoelectronics , nanotechnology , dielectric , physics , quantum mechanics

The Bi4Ti3O12 and Bi3.25La0.75Ti3O12 thin films are prepared on the Pt/Ti/SiO2/Si substrate using sol-gel method. The structures Pt/Bi3.25La0.75Ti3O12/Pt and Pt/Bi4Ti3O12/Pt are fabricated. The effects of La doping on the microstructures, and ferroelectric properties of Bi4Ti3O12 films are investigated. The 2Pr with test voltage 6V for the sample annealed at 700℃ increased from 12.5 μC/cm2 to 18.6 μC/cm2, and 2Vc is still 2.8 V when the La3+ ions occupy part of Bi3+ sites. The Bi3.25La0.75Ti3O12 films showed fatigue-free behavior. The mechanism of improvement of La-doped Bi4Ti3O12 ferroelectric thin films is discussed.

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