Open AccessThe influence of contact metal in carbon nanotube transistor
Author(s) -
Pingjian Li,
Wenjing Zhang,
Qifeng Zhang,
Wu Jin-Lei
Publication year - 2006
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.55.5460
Subject(s) - materials science , schottky barrier , carbon nanotube field effect transistor , work function , carbon nanotube , transistor , electrode , metal , nanotechnology , work (physics) , contact resistance , optoelectronics , field effect transistor , electrical engineering , voltage , metallurgy , layer (electronics) , mechanical engineering , chemistry , diode , engineering
We have fabricated p-type and n-type carbon nanotube transistors (CNTFETs) by using high and low work-function metals Pt and Al as contact electrodes respectively. The band structures indicate that the work functions of contact metals play an important role in operation mechanism of CNTFETs. We can obtain fine-tuning of Schottky barrier heights for p- and n-channel conductions by changing the contact metals. These results can be explained by taking into account the work functions of the contact metals.