Open AccessPreparation of cubic boron nitride films by radio frequency sputtering
Author(s) -
Ling Tian,
Ding Yi,
Hao Chen,
Junkai Liu,
Jinxiang Deng,
Deyan He,
Guanghua Chen
Publication year - 2006
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.55.5441
Subject(s) - boron nitride , materials science , sputtering , substrate (aquarium) , compressive strength , phase (matter) , nitride , composite material , cubic crystal system , thin film , stress (linguistics) , boron , analytical chemistry (journal) , condensed matter physics , nanotechnology , layer (electronics) , chemistry , physics , oceanography , linguistics , organic chemistry , philosophy , chromatography , geology
Cubic boron nitride (c-BN) thin films with approximate 100% cubic phase and lower compressive stress were prepared on n-Si(111) substrates by radio frequency sputtering. The infrared spectra showed that the negative substrate bias had important effect on the content of cubic phase and the compressive stress of films. In addition, a relatively higher substrate resistivity favored the c-BN formation and reduced the compressive stress.