Open AccessElectromigration in Al interconnects and the challenges in ultra-deep submicron technology
Author(s) -
Wenjie Zhang,
Wanbing Yi,
Wu Jin
Publication year - 2006
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.55.5424
Subject(s) - electromigration , microelectronics , reliability (semiconductor) , scaling , computer science , divergence (linguistics) , materials science , engineering physics , flux (metallurgy) , current (fluid) , statistical physics , nanotechnology , physics , thermodynamics , metallurgy , mathematics , composite material , power (physics) , linguistics , geometry , philosophy
Electromigration (EM) problem in Al interconnects is one of the most persistent and important challenges in the microelectronic industry. From 1990s, with the scaling down and new processes introduced, ultra-deep submicron (feature size≤0.18 μm) Al interconnects involve more complicated EM issues. In this paper, we summarized the basic formulae of the EM phenomena and got the important flux divergence equations. Based on the equations, the research methods for EM problems were reviewed. The main issues and solutions during the half century of investigation for Al EM challenges were reviewed as well. Finally, the essentials and challenges of current ultra-deep submicron Al EM reliability are analyzed, and some prospective solutions were also proposed.