Open AccessAnalytic tunneling-current model of small-scale MOSFETs
Author(s) -
Weibing Chen,
Jing-Ping Xu,
Zhijian Xiao,
Yanping Li,
Xu Sheng-Guo,
Zhifu Hu
Publication year - 2006
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.55.5036
Subject(s) - quantum tunnelling , dielectric , gate dielectric , materials science , inversion (geology) , optoelectronics , mosfet , leakage (economics) , stack (abstract data type) , computational physics , condensed matter physics , computer science , physics , voltage , transistor , quantum mechanics , paleontology , macroeconomics , structural basin , economics , biology , programming language
An analytic model of direct tunneling current of small-scale MOSFETs in depletion and inversion is developed based on analytic surface-potential model and replacing the multi-subband with a single-subband. The simulated results are in good agreement with the results of self-consistent solution and experimental data, but take much shorter computing time than the self-consistent solution method. This indicates that the model can be used for analysis of gate-leakage properties of MOS devices with not only SiO2 but also high-k materials as gate dielectric and high-k gate dielectric stack structures, and circuit simulation of MOS devices.