Open AccessVacancy-type defects induced by He-implantation in ZnO studied by a slow positron beam
Author(s) -
Zhiquan Chen,
A. Kawasuso
Publication year - 2006
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.55.4353
Subject(s) - vacancy defect , doppler broadening , materials science , annealing (glass) , ion implantation , positron annihilation spectroscopy , atomic physics , positron , ion , impurity , atom (system on chip) , positron annihilation , spectral line , condensed matter physics , physics , nuclear physics , electron , metallurgy , astronomy , computer science , embedded system , quantum mechanics
ZnO single crystals were implanted with He ions of energy of 20—100keV. The total implantation dose was 4.4×1015cm-2. Doppler broadening of positron annihilation spectra were measured using a slow positron beam to study the implantation-induced defects. The results suggest that after implantation, divacancies or larger vacancy clusters are produced. After annealing below 400℃, He impurity begins to occupy the vacancy clusters. Upon further annealing above 400℃, the vacancy clusters grow in size. At annealing temperature of above 800℃, He atom is released from the vacancy clusters, and the vacancies begin to recover and are annealed out at 1000℃.