Vacancy-type defects induced by He-implantation in ZnO studied by a slow positron beam | Zendy

Zhiquan Chen | Zendy; Kawasuso Atsuo | Zendy

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Vacancy-type defects induced by He-implantation in ZnO studied by a slow positron beam

Author(s) -

Zhiquan Chen,

Kawasuso Atsuo

Publication year - 2006

Publication title -

acta physica sinica

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.199

H-Index - 47

ISSN - 1000-3290

DOI - 10.7498/aps.55.4353

Subject(s) - vacancy defect , doppler broadening , materials science , annealing (glass) , ion implantation , positron annihilation spectroscopy , atomic physics , positron , ion , impurity , atom (system on chip) , positron annihilation , spectral line , condensed matter physics , physics , nuclear physics , electron , metallurgy , astronomy , computer science , embedded system , quantum mechanics

ZnO single crystals were implanted with He ions of energy of 20—100keV. The total implantation dose was 4.4×1015cm-2. Doppler broadening of positron annihilation spectra were measured using a slow positron beam to study the implantation-induced defects. The results suggest that after implantation, divacancies or larger vacancy clusters are produced. After annealing below 400℃, He impurity begins to occupy the vacancy clusters. Upon further annealing above 400℃, the vacancy clusters grow in size. At annealing temperature of above 800℃, He atom is released from the vacancy clusters, and the vacancies begin to recover and are annealed out at 1000℃.

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