Open AccessMultiple-state storage capability of nitrogen-doped Ge2Sb2Te5 film for phase change memory
Author(s) -
Lai Yun-Feng,
Jiangshan Feng,
Baowei Qiao,
Yun Ling,
Ying-Hsi Lin,
Ting-Ao Tang,
Bingchu Cai,
Chen Bang-ming
Publication year - 2006
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.55.4347
Subject(s) - phase change memory , materials science , doping , phase change , phase (matter) , nitrogen , state (computer science) , optoelectronics , computer science , nanotechnology , engineering physics , physics , layer (electronics) , quantum mechanics , algorithm
Nitrogen-doped Ge2Sb2Te5 (N-GST) film for phase change memory was prepared by reactive sputtering. Testing results show that doped nitrogen combines with Ge to form GeN, which not only restrains crystal grain growth but also increases the crystallization temperature and phase transformation temperature of Ge2Sb2Te5 (GST). Phase change memory (PCM) with N-GST can realize three-state storage in one PCM cell by using the resistivity difference between the amorphous state, the face centered cubic phase and the hexagonal phase of GST.