Poly-SiGe films prepared by metal-induced growth using UHVCVD system | Zendy

Wu Gui-Bin | Zendy; Zhizhen Ye | Zendy; Xing Zhao | Zendy; Guojun Liu | Zendy; Zhao Bin-hui | Zendy

AI Assistant Blog Pricing

Home ZAIA Blog

Open Access

Poly-SiGe films prepared by metal-induced growth using UHVCVD system

Author(s) -

Wu Gui-Bin,

Zhizhen Ye,

Xing Zhao,

Guojun Liu,

Zhao Bin-hui

Publication year - 2006

Publication title -

acta physica sinica

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.199

H-Index - 47

ISSN - 1000-3290

DOI - 10.7498/aps.55.3756

Subject(s) - materials science , morphology (biology) , chemical vapor deposition , metal , chemical engineering , deposition (geology) , thin film , nanotechnology , composite material , metallurgy , engineering , paleontology , genetics , sediment , biology

Poly-SiGe films were prepared by a metal-induced growth technique with ultrahigh vacuum chemical vapor deposition(UHVCVD) at low temperature. The crystal quality and morphology of poly-SiGe films were characterized by XRD and SEM. The influences of varying the thickness of Ni prelayer and the growth parameters on poly-SiGe films were investigated. It is shown that thicker Ni(≥10nm) has an obvious effect on poly-SiGe growth at 420—500℃. And for the samples with 60nm thick Ni layers, poly-SiGe deposition yields a continuous, highly crystalline film with good morphology.

The content you want is available to Zendy users.

Already have an account? Click here to sign in.

Having issues? You can contact us here

Accelerating Research