Open AccessPoly-SiGe films prepared by metal-induced growth using UHVCVD system
Author(s) -
Guibin Wu,
Zhizhen Ye,
Zhao Feng Xing,
Guojun Liu,
Zhao Bin-hui
Publication year - 2006
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.55.3756
Subject(s) - materials science , morphology (biology) , chemical vapor deposition , metal , chemical engineering , deposition (geology) , thin film , nanotechnology , composite material , metallurgy , engineering , paleontology , genetics , sediment , biology
Poly-SiGe films were prepared by a metal-induced growth technique with ultrahigh vacuum chemical vapor deposition(UHVCVD) at low temperature. The crystal quality and morphology of poly-SiGe films were characterized by XRD and SEM. The influences of varying the thickness of Ni prelayer and the growth parameters on poly-SiGe films were investigated. It is shown that thicker Ni(≥10nm) has an obvious effect on poly-SiGe growth at 420—500℃. And for the samples with 60nm thick Ni layers, poly-SiGe deposition yields a continuous, highly crystalline film with good morphology.